Invention Grant
US08315034B2 Multilayer chip capacitor with improved equivalent series resistance
有权
具有改善等效串联电阻的多层片式电容器
- Patent Title: Multilayer chip capacitor with improved equivalent series resistance
- Patent Title (中): 具有改善等效串联电阻的多层片式电容器
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Application No.: US12245856Application Date: 2008-10-06
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Publication No.: US08315034B2Publication Date: 2012-11-20
- Inventor: Byoung Hwa Lee , Sung Kwon Wi , Hae Suk Chung , Dong Seok Park , Sang Soo Park , Min Cheol Park
- Applicant: Byoung Hwa Lee , Sung Kwon Wi , Hae Suk Chung , Dong Seok Park , Sang Soo Park , Min Cheol Park
- Applicant Address: KR Gyunngi-Do
- Assignee: Samsung Electro-Mechanics Co. Ltd.
- Current Assignee: Samsung Electro-Mechanics Co. Ltd.
- Current Assignee Address: KR Gyunngi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2008-0030382 20080401
- Main IPC: H01G4/228
- IPC: H01G4/228 ; H01G4/06 ; H01G4/38

Abstract:
A multilayer chip capacitor includes a capacitor body including a first capacitor part and a second capacitor part, first and second external electrodes respectively formed on first and second longer side faces of the capacitor body, and third and fourth external electrodes respectively formed on first and second shorter side faces of the capacitor body. The first capacitor part includes first and second internal electrodes of opposite polarity, and the second capacitor part includes third and fourth internal electrodes of opposite polarity. The first to fourth internal electrodes each have one lead. The first to fourth external electrodes are respectively connected to the leads of the first to fourth internal electrodes. A series resonance frequency of the first capacitor part is different from that of the second capacitor part. Equivalent series resistance (ESR1) of the first capacitor part and the equivalent series resistance (ESR2) of the second capacitor part satisfy ERS1≧20 mΩ and 0.7(ESR1)≦ESR2≦1.3(ESR1).
Public/Granted literature
- US20090244803A1 MULTILAYER CHIP CAPACITOR Public/Granted day:2009-10-01
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