Invention Grant
- Patent Title: Multiple phase change materials in an integrated circuit for system on a chip application
- Patent Title (中): 用于芯片应用系统的集成电路中的多相变材料
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Application No.: US13008436Application Date: 2011-01-18
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Publication No.: US08315088B2Publication Date: 2012-11-20
- Inventor: Hsiang-Lan Lung
- Applicant: Hsiang-Lan Lung
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
An integrated circuit includes a plurality of memory cells on a substrate, in which a first set of memory cells uses a first memory material, and a second set of memory cells uses a second memory material. The first and second memory materials have different properties such that the first and second sets of memory cells have different operational memory characteristics, such as switching speeds, retention and endurance.
Public/Granted literature
- US20110116308A1 MULTIPLE PHASE CHANGE MATERIALS IN AN INTEGRATED CIRCUIT FOR SYSTEM ON A CHIP APPLICATION Public/Granted day:2011-05-19
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