Invention Grant
US08315117B2 Integrated circuit memory having assisted access and method therefor
有权
具有辅助访问的集成电路存储器及其方法
- Patent Title: Integrated circuit memory having assisted access and method therefor
- Patent Title (中): 具有辅助访问的集成电路存储器及其方法
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Application No.: US12414761Application Date: 2009-03-31
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Publication No.: US08315117B2Publication Date: 2012-11-20
- Inventor: Shayan Zhang , Troy L. Cooper , Jack M. Higman , Prashant U. Kenkare , Andrew C. Russell
- Applicant: Shayan Zhang , Troy L. Cooper , Jack M. Higman , Prashant U. Kenkare , Andrew C. Russell
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A memory and method for access the memory are provided. A first test is used to test memory elements to determine a lowest power supply voltage at which all the memory elements will operate to determine a weak memory element. Redundancy is used to substitute a redundant memory element for the weak memory element. The weak memory element is designated as a test element. In response to receiving a request to change a power supply voltage provided to the memory elements, a second test is used to test the test element to determine if the test element will function correctly at a new power supply voltage. If the test element passes the second test, the memory elements are accessed at the new power supply voltage. If the test element fails the second test, the memory elements are accessed using an access assist operation.
Public/Granted literature
- US20100246298A1 INTEGRATED CIRCUIT MEMORY HAVING ASSISTED ACCESS AND METHOD THEREFOR Public/Granted day:2010-09-30
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