Invention Grant
- Patent Title: Semiconductor component structure with vertical dielectric layers
- Patent Title (中): 具有垂直电介质层的半导体元件结构
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Application No.: US12984934Application Date: 2011-01-05
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Publication No.: US08319261B2Publication Date: 2012-11-27
- Inventor: Anton Mauder , Stefan Sedlmaier , Ralf Erichsen , Hans Weber , Oliver Haeberlen , Franz Hirler
- Applicant: Anton Mauder , Stefan Sedlmaier , Ralf Erichsen , Hans Weber , Oliver Haeberlen , Franz Hirler
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
Abstract:
A semiconductor component having a semiconductor body having a first and a second side, an edge and an edge region adjacent to the edge in a lateral direction is described.
Public/Granted literature
- US20110101451A1 SEMICONDUCTOR COMPONENT STRUCTURE WITH VERTICAL DIELECTRIC LAYERS Public/Granted day:2011-05-05
Information query
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