Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12979865Application Date: 2010-12-28
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Publication No.: US08319264B2Publication Date: 2012-11-27
- Inventor: Seung Bum Kim
- Applicant: Seung Bum Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2010-0038527 20100426
- Main IPC: H01L29/94
- IPC: H01L29/94

Abstract:
A semiconductor device comprises: a semiconductor substrate including an active region defined as a device isolation film; a bit line contact hole obtained by etching the semiconductor substrate; a bit line contact plug having a smaller width than that of the bit line contact hole; and a bit line connected to the upper portion of the bit line contact plug, thereby preventing a short of the bit line contact plug and the storage node contact plug to improve characteristics of the semiconductor device.
Public/Granted literature
- US20110260238A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURINMG THE SAME Public/Granted day:2011-10-27
Information query
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