Invention Grant
- Patent Title: Device including nonvolatile memory element
- Patent Title (中): 设备包括非易失性存储元件
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Application No.: US12943532Application Date: 2010-11-10
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Publication No.: US08319267B2Publication Date: 2012-11-27
- Inventor: Kiyoshi Kato , Yoshinori Ieda , Jun Koyama
- Applicant: Kiyoshi Kato , Yoshinori Ieda , Jun Koyama
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-260211 20091113
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A device including a novel nonvolatile memory element is provided. A device including a nonvolatile memory element in which an oxide semiconductor is used as a semiconductor material for a channel formation region. The nonvolatile memory element includes a control gate, a charge accumulation layer which overlaps with the control gate with a first insulating film provided therebetween, and an oxide semiconductor layer formed using an oxide semiconductor material, which overlaps with the charge accumulation layer with a second insulating film provided therebetween.
Public/Granted literature
- US20110114941A1 DEVICE INCLUDING NONVOLATILE MEMORY ELEMENT Public/Granted day:2011-05-19
Information query
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