Invention Grant
- Patent Title: High-voltage bipolar transistor with trench field plate
- Patent Title (中): 具有沟槽场板的高压双极晶体管
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Application No.: US12833202Application Date: 2010-07-09
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Publication No.: US08319282B2Publication Date: 2012-11-27
- Inventor: Christoph Kadow , Thorsten Meyer , Norbert Krischke
- Applicant: Christoph Kadow , Thorsten Meyer , Norbert Krischke
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L27/06
- IPC: H01L27/06
Abstract:
A bipolar transistor structure includes an epitaxial layer on a semiconductor substrate, a bipolar transistor device formed in the epitaxial layer and a trench structure formed in the epitaxial layer adjacent at least two opposing lateral sides of the bipolar transistor device. The trench structure includes a field plate spaced apart from the epitaxial layer by an insulating material. The bipolar transistor structure further includes a base contact connected to a base of the bipolar transistor device, an emitter contact connected to an emitter of the bipolar transistor device and isolated from the base contact and an electrical connection between the emitter contact and the field plate.
Public/Granted literature
- US20120007176A1 High-Voltage Bipolar Transistor with Trench Field Plate Public/Granted day:2012-01-12
Information query
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