Invention Grant
US08319528B2 Semiconductor device having interconnected transistors and electronic device including semiconductor device
有权
具有互连晶体管的半导体器件和包括半导体器件的电子器件
- Patent Title: Semiconductor device having interconnected transistors and electronic device including semiconductor device
- Patent Title (中): 具有互连晶体管的半导体器件和包括半导体器件的电子器件
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Application No.: US12730976Application Date: 2010-03-24
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Publication No.: US08319528B2Publication Date: 2012-11-27
- Inventor: Hajime Kimura , Atsushi Umezaki
- Applicant: Hajime Kimura , Atsushi Umezaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2009-077203 20090326
- Main IPC: H03K3/00
- IPC: H03K3/00
Abstract:
It is an object to suppress deterioration in characteristics of a transistor in a driver circuit. A driver circuit includes a first transistor, a second transistor including a gate and one of a source and a drain to which a second signal is inputted, a third transistor whose gate is electrically connected to one of a source and a drain of the first transistor and which controls whether a voltage state of an output signal is set or not by being turned on/off, and a fourth transistor whose gate is electrically connected to the other of the source and the drain of the second transistor and which controls whether a voltage state of an output signal is set or not by being turned on/off.
Public/Granted literature
- US20100246750A1 Semiconductor Device and Electronic Device Including Semiconductor Device Public/Granted day:2010-09-30
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