Invention Grant
US08320195B2 Memory circuit and method of writing data to and reading data from memory circuit
失效
存储电路和从存储器电路写入数据并从其读取数据的方法
- Patent Title: Memory circuit and method of writing data to and reading data from memory circuit
- Patent Title (中): 存储电路和从存储器电路写入数据并从其读取数据的方法
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Application No.: US12656697Application Date: 2010-02-12
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Publication No.: US08320195B2Publication Date: 2012-11-27
- Inventor: Masao Ide , Tomohiro Tanaka
- Applicant: Masao Ide , Tomohiro Tanaka
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
A disclosed memory circuit includes first and second latch circuits, each writing a write data at a timing of a clock signal and retaining the write data, the write data having been input in each of the first and second latch circuits, a data input circuit supplying the write data to each of the first and second latch circuits when a write enable signal indicates a state allowing the write data to be written, a write back circuit supplying the write data retained in the second latch circuit to the first latch circuit when the write enable signal indicates a state preventing the write data from being written, wherein a robustness against noise in the second latch circuit is more improved than that in the first latch circuit.
Public/Granted literature
- US20100149885A1 Memory circuit and method of writing data to and reading data from memory circuit Public/Granted day:2010-06-17
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