Invention Grant
US08320195B2 Memory circuit and method of writing data to and reading data from memory circuit 失效
存储电路和从存储器电路写入数据并从其读取数据的方法

Memory circuit and method of writing data to and reading data from memory circuit
Abstract:
A disclosed memory circuit includes first and second latch circuits, each writing a write data at a timing of a clock signal and retaining the write data, the write data having been input in each of the first and second latch circuits, a data input circuit supplying the write data to each of the first and second latch circuits when a write enable signal indicates a state allowing the write data to be written, a write back circuit supplying the write data retained in the second latch circuit to the first latch circuit when the write enable signal indicates a state preventing the write data from being written, wherein a robustness against noise in the second latch circuit is more improved than that in the first latch circuit.
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