Invention Grant
- Patent Title: High power semiconductor laser diodes
- Patent Title (中): 大功率半导体激光二极管
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Application No.: US12873382Application Date: 2010-09-01
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Publication No.: US08320419B2Publication Date: 2012-11-27
- Inventor: Martin Krejci , Norbert Lichtenstein , Stefan Weiss , Julien Boucart , René Todt
- Applicant: Martin Krejci , Norbert Lichtenstein , Stefan Weiss , Julien Boucart , René Todt
- Applicant Address: GB Northamptonshire
- Assignee: Oclaro Technology Limited
- Current Assignee: Oclaro Technology Limited
- Current Assignee Address: GB Northamptonshire
- Agency: Patterson & Sheridan, L.L.P.
- Main IPC: H01S3/04
- IPC: H01S3/04

Abstract:
A high power laser source comprises a bar of laser diodes having a first coefficient of thermal expansion CTEbar on a submount having a second coefficient CTEsub and a cooler having a third coefficient CTEcool. The submount/cooler assembly shows an effective fourth coefficient CTEeff differing from CTEbar. This difference leads to a deformation of the crystal lattice of the lasers' active regions by mechanical stress. CTEeff is selected to be either lower than both CTEbar and CTEcool or is selected to be between CTEbar and CTEcool. The submount may either comprise layers of materials having different CTEs, e.g., a Cu layer of 10-40 μm thickness and a Mo layer of 100-400 μm thickness, or a single material with a varying CTEsub. Both result in a CTEsub varying across the submount's thickness.
Public/Granted literature
- US20110051758A1 HIGH POWER SEMICONDUCTOR LASER DIODES Public/Granted day:2011-03-03
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