Invention Grant
- Patent Title: Semiconductor device having a threshold voltage control function
- Patent Title (中): 具有阈值电压控制功能的半导体器件
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Application No.: US13171549Application Date: 2011-06-29
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Publication No.: US08321711B2Publication Date: 2012-11-27
- Inventor: Jun Koyama
- Applicant: Jun Koyama
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2004-024248 20040130
- Main IPC: G06F1/32
- IPC: G06F1/32

Abstract:
The invention provides a semiconductor device that power is stabilized by suppressing power consumption as much as possible. The semiconductor device of the invention includes a logic portion and a memory portion each including a plurality of transistors, a detecting portion for detecting one or both of operation frequencies of the logic portion and the memory portion, a Vth control for supplying a Vth control signal to one or both of the logic portion and the memory portion, and an antenna. Each of the plurality of transistors has a first gate electrode which is input with a logic signal, a second gate electrode which is input with the Vth control signal, and a semiconductor film such that the second gate electrode, the semiconductor film, and the first gate electrode are provided in this order from the bottom.
Public/Granted literature
- US20110255326A1 Semiconductor Device Public/Granted day:2011-10-20
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