Invention Grant
US08322020B2 Method for fabricating a semiconductor test probe card space transformer
有权
制造半导体测试探针卡空间变压器的方法
- Patent Title: Method for fabricating a semiconductor test probe card space transformer
- Patent Title (中): 制造半导体测试探针卡空间变压器的方法
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Application No.: US13227580Application Date: 2011-09-08
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Publication No.: US08322020B2Publication Date: 2012-12-04
- Inventor: Ming Cheng Hsu , Clinton Chih-Chieh Chao
- Applicant: Ming Cheng Hsu , Clinton Chih-Chieh Chao
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01F7/06
- IPC: H01F7/06

Abstract:
A space transformer for a semiconductor test probe card and method of fabrication. The method may include depositing a first metal layer as a ground plane on a space transformer substrate having a plurality of first contact test pads defining a first pitch spacing, depositing a first dielectric layer on the ground plane, forming a plurality of second test contacts defining a second pitch spacing different than the first pitch spacing, and forming a plurality of redistribution leads on the first dielectric layer to electrically couple the first contact test pads to the second contact test pads. In some embodiments, the redistribution leads may be built directly on the space transformer substrate. The method may be used in one embodiment to remanufacture an existing space transformer to produce fine pitch test pads having a pitch spacing smaller than the original test pads.
Public/Granted literature
- US20120017428A1 METHOD FOR FABRICATING A SEMICONDUCTOR TEST PROBE CARD SPACE TRANSFORMER Public/Granted day:2012-01-26
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