Invention Grant
- Patent Title: Phase-shift mask with assist phase regions
- Patent Title (中): 具有辅助相位区域的相移掩模
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Application No.: US13066804Application Date: 2011-04-25
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Publication No.: US08323857B2Publication Date: 2012-12-04
- Inventor: Robert L. Hsieh , Warren W. Flack
- Applicant: Robert L. Hsieh , Warren W. Flack
- Applicant Address: US CA San Jose
- Assignee: Ultratech, Inc.
- Current Assignee: Ultratech, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Opticus IP Law PLLC
- Main IPC: G03F1/36
- IPC: G03F1/36

Abstract:
A phase-shift mask having a checkerboard array and a surrounding sub-resolution assist phase pattern. The checkerboard array comprises alternating phase-shift regions R that have a relative phase difference of 180 degrees. The sub-resolution assist phase regions R′ reside adjacent corresponding phase-shift regions R and have a relative phase difference of 180 degrees thereto. The sub-resolution assist phase regions R′ are configured to mitigate undesirable edge effects when photolithographically forming photoresist features. Method of forming LEDs using the phase-shift mask are also disclosed.
Public/Granted literature
- US20120156814A1 Phase-shift mask with assist phase regions Public/Granted day:2012-06-21
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