Sputtering-less ultra-low energy ion implantation

Invention Grant

US08324088B2 Sputtering-less ultra-low energy ion implantation 失效

Title translation: 无溅射超低能离子注入

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Patent Title: Sputtering-less ultra-low energy ion implantation
Patent Title (中): 无溅射超低能离子注入
Application No.: US13098607

Application Date: 2011-05-02
Publication No.: US08324088B2

Publication Date: 2012-12-04
Inventor: Shu Qin , Li Li
Applicant: Shu Qin , Li Li
Applicant Address: US ID Boise
Assignee: Micron Technology, Inc.
Current Assignee: Micron Technology, Inc.
Current Assignee Address: US ID Boise
Agency: TraskBritt
Main IPC: H01L21/425
IPC: H01L21/425

Sputtering-less ultra-low energy ion implantation

Abstract:

Methods of implanting dopants into a silicon substrate using a predeposited sacrificial material layer with a defined thickness that is removed by sputtering effect is provided.

Abstract(Chinese):

提供了使用预定沉积的具有通过溅射效应去除的厚度的牺牲材料层将掺杂剂注入到硅衬底中的方法。

Public/Granted literature

US20110212608A1 Sputtering-Less Ultra-Low Energy Ion Implantation Public/Granted day:2011-09-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/42	....用辐射轰击的
H01L21/423	.....带有高能辐射的
H01L21/425	......产生离子注入的