Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions

Invention Grant

US08324089B2 Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions 有权

Title translation: 用于在半导体衬底中形成掺杂区的组合物，用于制备这种组合物的方法，以及使用这种组合物形成掺杂区的方法

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Patent Title: Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
Patent Title (中): 用于在半导体衬底中形成掺杂区的组合物，用于制备这种组合物的方法，以及使用这种组合物形成掺杂区的方法
Application No.: US12839924

Application Date: 2010-07-20
Publication No.: US08324089B2

Publication Date: 2012-12-04
Inventor: Roger Yu-Kwan Leung , Wenya Fan , Jan Nedbal
Applicant: Roger Yu-Kwan Leung , Wenya Fan , Jan Nedbal
Applicant Address: US NJ Morristown
Assignee: Honeywell International Inc.
Current Assignee: Honeywell International Inc.
Current Assignee Address: US NJ Morristown
Agency: Ingrassia Fisher & Lorenz, P.C.
Main IPC: H01L21/385
IPC: H01L21/385

Abstract:

Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions are provided. In one embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a moisture adsorption-minimizing component. In another embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a high boiling point material selected from the group consisting of glycol ethers, alcohols, and combinations thereof. The high boiling point material has a boiling point of at least about 150° C.

Abstract(Chinese):

提供了用于在半导体衬底中形成掺杂区的组合物，用于制备这种组合物的方法，以及使用这种组合物形成掺杂区的方法。在一个实施方案中，包含掺杂剂的组合物包含电导率确定型杂质掺杂剂，硅酸盐载体，溶剂和水分吸附最小化组分。在另一个实施方案中，含掺杂剂的组合物包含导电性确定型杂质掺杂剂，硅酸盐载体，溶剂和选自二醇醚，醇及其组合的高沸点材料。高沸点材料的沸点至少为约150℃

Public/Granted literature

US20110021012A1 COMPOSITIONS FOR FORMING DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES, METHODS FOR FABRICATING SUCH COMPOSITIONS, AND METHODS FOR FORMING DOPED REGIONS USING SUCH COMPOSITIONS Public/Granted day:2011-01-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/38	....杂质材料的扩散，例如在半导体或半导体的交界区掺入或析出掺杂材料、电极材料
H01L21/385	.....应用从固相向固体或从固体向固相的扩散法，例如掺杂氧化层