Invention Grant
- Patent Title: Vias and method of making
- Patent Title (中): 通风口和制作方法
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Application No.: US12162600Application Date: 2007-01-31
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Publication No.: US08324103B2Publication Date: 2012-12-04
- Inventor: Tomas Bauer
- Applicant: Tomas Bauer
- Applicant Address: SE Jarfalla
- Assignee: Silex Microsystems AB
- Current Assignee: Silex Microsystems AB
- Current Assignee Address: SE Jarfalla
- Agency: Pierce Atwood LLP
- Agent Kevin M. Farrell; Weber Hsiao
- Priority: SE0600214 20060201
- International Application: PCT/SE2007/050052 WO 20070131
- International Announcement: WO2007/089206 WO 20070809
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
The invention relates to a method of providing a planar substrate with electrical through connections (vias). The method comprises providing a hole in said substrate and a treatment to render the substrate surface exhibiting a lower wettability than the walls inside the hole. The planar substrate is exposed to a molten material with low resistivity, whereby the molten material is drawn into the hole(s). It also relates to a semiconductor wafer as a starting substrate for electronic packaging applications, comprising low resistivity wafer through connections having closely spaced vias.
Public/Granted literature
- US20100052107A1 VIAS AND METHOD OF MAKING Public/Granted day:2010-03-04
Information query
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