Invention Grant
US08324103B2 Vias and method of making 有权
通风口和制作方法

  • Patent Title: Vias and method of making
  • Patent Title (中): 通风口和制作方法
  • Application No.: US12162600
    Application Date: 2007-01-31
  • Publication No.: US08324103B2
    Publication Date: 2012-12-04
  • Inventor: Tomas Bauer
  • Applicant: Tomas Bauer
  • Applicant Address: SE Jarfalla
  • Assignee: Silex Microsystems AB
  • Current Assignee: Silex Microsystems AB
  • Current Assignee Address: SE Jarfalla
  • Agency: Pierce Atwood LLP
  • Agent Kevin M. Farrell; Weber Hsiao
  • Priority: SE0600214 20060201
  • International Application: PCT/SE2007/050052 WO 20070131
  • International Announcement: WO2007/089206 WO 20070809
  • Main IPC: H01L21/44
  • IPC: H01L21/44
Vias and method of making
Abstract:
The invention relates to a method of providing a planar substrate with electrical through connections (vias). The method comprises providing a hole in said substrate and a treatment to render the substrate surface exhibiting a lower wettability than the walls inside the hole. The planar substrate is exposed to a molten material with low resistivity, whereby the molten material is drawn into the hole(s). It also relates to a semiconductor wafer as a starting substrate for electronic packaging applications, comprising low resistivity wafer through connections having closely spaced vias.
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