Invention Grant
US08324624B2 Thin film transistor array substrate for an X-ray detector and method of fabricating the same
有权
用于X射线检测器的薄膜晶体管阵列基板及其制造方法
- Patent Title: Thin film transistor array substrate for an X-ray detector and method of fabricating the same
- Patent Title (中): 用于X射线检测器的薄膜晶体管阵列基板及其制造方法
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Application No.: US12647352Application Date: 2009-12-24
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Publication No.: US08324624B2Publication Date: 2012-12-04
- Inventor: Kwan-Wook Jung
- Applicant: Kwan-Wook Jung
- Applicant Address: KR
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2008-0134753 20081226
- Main IPC: H01L31/08
- IPC: H01L31/08

Abstract:
A thin film transistor (TFT) array substrate for an X-ray detector and a method of fabricating the same are provided. The TFT array substrate includes a substrate, a gate line formed on the substrate, a data line crossing the gate line, a thin film transistor including a gate electrode, a source electrode, and a drain electrode, a first electrode connected to the drain electrode, a passivation layer formed over the gate line, the data line, the thin film transistor and the first electrode, a photoconductor formed over the passivation layer and connected to the first electrode, and a second electrode formed on the photoconductor.
Public/Granted literature
- US20100163882A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE FOR AN X-RAY DETECTOR AND METHOD OF FABRICATING THE SAME Public/Granted day:2010-07-01
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