Invention Grant
- Patent Title: Semiconductor device and method for making the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12956635Application Date: 2010-11-30
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Publication No.: US08324714B2Publication Date: 2012-12-04
- Inventor: Jun Tsukakoshi , Yoshitaka Aiba
- Applicant: Jun Tsukakoshi , Yoshitaka Aiba
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2009-273148 20091201
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L21/78
Abstract:
A semiconductor device includes a semiconductor substrate having a main surface in which a semiconductor element region where a plurality of functional elements are formed is formed; a multilevel wiring layer disposed on the main surface of the semiconductor substrate; a first organic insulating material layer disposed on the multilevel wiring layer; a groove that penetrates the multilevel wiring layer on a scribe region that surrounds the semiconductor element region; and an organic insulating material that is spaced from the first organic insulating material layer and disposed in the groove.
Public/Granted literature
- US20110127647A1 SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME Public/Granted day:2011-06-02
Information query
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