Invention Grant
- Patent Title: Integrated circuit device
- Patent Title (中): 集成电路器件
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Application No.: US13225318Application Date: 2011-09-02
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Publication No.: US08325515B2Publication Date: 2012-12-04
- Inventor: Serguei Okhonin , Mikhail Nagoga
- Applicant: Serguei Okhonin , Mikhail Nagoga
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wilmer Cutler Pickering Hale and Dorr LLP
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A semiconductor device along with circuits including same and methods of operating same are disclosed. In one particular embodiment, the device may comprise a memory cell including a transistor. The transistor may comprise a gate, an electrically floating body region, and a source region and a drain region adjacent the body region. Data stored in memory cells of the device may be refreshed during hold operations.
Public/Granted literature
- US20120002467A1 SINGLE TRANSISTOR MEMORY CELL Public/Granted day:2012-01-05
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