Invention Grant
US08325525B2 Dual channel memory architecture having reduced interface pin requirements using a double data rate scheme for the address/control signals 有权
双通道存储器架构使用双数据速率方案来减少接口引脚要求,用于地址/控制信号

  • Patent Title: Dual channel memory architecture having reduced interface pin requirements using a double data rate scheme for the address/control signals
  • Patent Title (中): 双通道存储器架构使用双数据速率方案来减少接口引脚要求,用于地址/控制信号
  • Application No.: US12860441
    Application Date: 2010-08-20
  • Publication No.: US08325525B2
    Publication Date: 2012-12-04
  • Inventor: Jian MaoRaghu Sankuratri
  • Applicant: Jian MaoRaghu Sankuratri
  • Applicant Address: US CA San Diego
  • Assignee: QUALCOMM Incorporated
  • Current Assignee: QUALCOMM Incorporated
  • Current Assignee Address: US CA San Diego
  • Agent Peter Michael Kamarchik; Nicholas J. Pauley; Jonathan T. Velasco
  • Main IPC: G11C16/04
  • IPC: G11C16/04
Dual channel memory architecture having reduced interface pin requirements using a double data rate scheme for the address/control signals
Abstract:
Apparatuses and methods for dual channel memory architecture with reduced interface pin requirements are presented. One memory architecture includes a memory controller, a first memory device coupled to the memory controller by a shared address bus and a first clock signal, and a second memory device coupled to the memory controller by the shared address bus and a second clock signal, where the polarity of the second clock signal is opposite of the first clock signal. A method for performing data transactions is presented. The method includes providing addressing signals over a shared address bus to a first memory device and a second memory device, providing clock signals to the memory devices which are reversed in polarity, where the clock signals are derived from a common clock signal, and transferring data to the memory devices over separate narrow data buses in an alternating manner based upon the clock signals.
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