Invention Grant
US08325548B2 Semiconductor device and semiconductor device test method for identifying a defective portion
有权
用于识别缺陷部分的半导体器件和半导体器件测试方法
- Patent Title: Semiconductor device and semiconductor device test method for identifying a defective portion
- Patent Title (中): 用于识别缺陷部分的半导体器件和半导体器件测试方法
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Application No.: US12819357Application Date: 2010-06-21
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Publication No.: US08325548B2Publication Date: 2012-12-04
- Inventor: Tatsuru Matsuo
- Applicant: Tatsuru Matsuo
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2009-147737 20090622
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C29/00

Abstract:
A semiconductor device includes a first memory including a first memory cell and a first redundant memory cell; a first test circuit configured to test the first memory and output first defect information indicating a defective portion included in the first memory cell; a first storage part; and a first control circuit configured to, based on unmodified information stored in the first storage part, and the first defect information, determine modified information to be stored in the first storage part, wherein the first memory identifies the defective portion based on the modified information of the first storage part and replaces the first memory cell including the defective portion with the first redundant memory cell.
Public/Granted literature
- US20100322023A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE TEST METHOD Public/Granted day:2010-12-23
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