Invention Grant
US08327092B2 Memory device configurable as interleaved or non-interleaved memory
有权
存储器件可配置为交错或非交错存储器
- Patent Title: Memory device configurable as interleaved or non-interleaved memory
- Patent Title (中): 存储器件可配置为交错或非交错存储器
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Application No.: US12563259Application Date: 2009-09-21
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Publication No.: US08327092B2Publication Date: 2012-12-04
- Inventor: Evandro José Pitaro Borracini , Marcelo Del Fiore de Araujo , Jefferson Bastreghi , Ross Sinclair Scouller
- Applicant: Evandro José Pitaro Borracini , Marcelo Del Fiore de Araujo , Jefferson Bastreghi , Ross Sinclair Scouller
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/02

Abstract:
A device is disclosed having a memory module that comprises a first memory block, a second memory block, a programmable storage location, and a memory controller. The first memory block of non-volatile memory comprises a plurality of word locations and an address decoder coupled to a first access port of the memory controller. The address decoder to select one of the plurality of word locations for access in response to receiving address information via the first access port. The second memory block comprising a plurality of word locations and an address decoder coupled to a second access port of the memory controller. The address decoder to select one of the plurality of word locations for access in response to receiving address information via the second access port. The memory controller comprising an input coupled to the programmable storage location, and to access, in response to the programmable configuration information having a first value, a first portion of the first memory block and a first portion of the second memory block as interleaved memory, a second portion of the first memory block as non-interleaved memory, and a second portion of the second memory block as non-interleaved memory.
Public/Granted literature
- US20110072190A1 MEMORY DEVICE AND METHOD Public/Granted day:2011-03-24
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