An embodiment of the invention relates to a memory device and a related method. In an embodiment, a check matrix for an error-correcting code is formed so that sets of input data bits can be written, wherein each set of input data bits generates one set of error-correcting code bits that can be written independently of each other and in an arbitrary order. An error-correcting code is thereby produced without the need to erase or copy any existing, originally written bit upon presentation of new input data.