Invention Grant
- Patent Title: Semiconductor element built-in device
- Patent Title (中): 半导体元件内置器件
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Application No.: US12971596Application Date: 2010-12-17
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Publication No.: US08330277B2Publication Date: 2012-12-11
- Inventor: Yoshihiro Machida
- Applicant: Yoshihiro Machida
- Applicant Address: JP Nagano-shi
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano-shi
- Agency: Rankin, Hill & Clark LLP
- Priority: JP2009-291632 20091224
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor element built-in device includes: a first substrate having a first pad thereon; a semiconductor element on the first substrate; a second substrate having a second pad thereon and mounted on the first substrate via a solder terminal having a solder coated thereon; a resin layer provided between the first substrate and the second substrate such that the solder terminal and the semiconductor element are embedded in the resin layer; and a dam provided at least partially around at least one of the first and second pads, the dam being configured to restrain the solder flowing from the solder terminal.
Public/Granted literature
- US20110156264A1 SEMICONDUCTOR ELEMENT BUILT-IN DEVICE Public/Granted day:2011-06-30
Information query
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