Invention Grant
- Patent Title: Current injection magnetic domain wall moving element
- Patent Title (中): 电流注入磁畴壁移动元件
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Application No.: US10585638Application Date: 2005-01-14
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Publication No.: US08331140B2Publication Date: 2012-12-11
- Inventor: Hideo Ohno , Fumihiro Matsukura , Daichi Chiba , Michihiko Yamanouchi
- Applicant: Hideo Ohno , Fumihiro Matsukura , Daichi Chiba , Michihiko Yamanouchi
- Applicant Address: JP Kawaguchi-shi JP Sendai-shi
- Assignee: Japan Science and Technology Agency,Tohoku University
- Current Assignee: Japan Science and Technology Agency,Tohoku University
- Current Assignee Address: JP Kawaguchi-shi JP Sendai-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-007514 20040115
- International Application: PCT/JP2005/000336 WO 20050114
- International Announcement: WO2005/069368 WO 20050728
- Main IPC: G11C11/15
- IPC: G11C11/15

Abstract:
The present invention provides a current injection-type magnetic domain wall-motion device which requires no external magnetic field for reversing the magnetization direction of a ferromagnetic body and which has low power consumption. The current injection-type magnetic domain wall-motion device includes a microjunction structure including two magnetic bodies (a first magnetic body 1 and a second magnetic body 2) having magnetization directions antiparallel to each other and a third magnetic body 3 sandwiched therebetween. The magnetization direction of the device is controlled in such a manner that a pulse current (a current density of 104-107 A/cm2) is applied across junction interfaces present in the microjunction structure such that a magnetic domain wall is moved by the interaction between the magnetic domain wall and the current in the same direction as that of the current or in the direction opposite to that of the current.
Public/Granted literature
- US20080137405A1 Current Injection Magnetic Domain Wall Moving Element Public/Granted day:2008-06-12
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