Invention Grant
US08331184B2 SRAM compatible embedded DRAM system with hidden refresh and dual port capabilities 有权
SRAM兼容的嵌入式DRAM系统具有隐藏的刷新和双端口功能

  • Patent Title: SRAM compatible embedded DRAM system with hidden refresh and dual port capabilities
  • Patent Title (中): SRAM兼容的嵌入式DRAM系统具有隐藏的刷新和双端口功能
  • Application No.: US12662564
    Application Date: 2010-04-23
  • Publication No.: US08331184B2
    Publication Date: 2012-12-11
  • Inventor: Szu-Mien Wang
  • Applicant: Szu-Mien Wang
  • Applicant Address: TW Hsinchu Science Park
  • Assignee: Orise Technology Co., Ltd.
  • Current Assignee: Orise Technology Co., Ltd.
  • Current Assignee Address: TW Hsinchu Science Park
  • Agency: Bacon & Thomas, PLLC
  • Priority: TW98113456A 20090423
  • Main IPC: G11C7/00
  • IPC: G11C7/00
SRAM compatible embedded DRAM system with hidden refresh and dual port capabilities
Abstract:
An SRAM compatible embedded DRAM system with hidden refresh and dual port capabilities includes a memory cell array comprised of a plurality of single-port memory cells with dual-port capability, a first and a second port access units connected to the memory cell array in order to access the memory cells, and an access arbiter connected to the first and the second port access units in order to arbitrate a first port access request, a second port access request and a hidden refresh request.
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