Invention Grant
- Patent Title: Parameterized dummy cell insertion for process enhancement
- Patent Title (中): 用于过程增强的参数化虚拟单元插入
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Application No.: US12959150Application Date: 2010-12-02
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Publication No.: US08332797B2Publication Date: 2012-12-11
- Inventor: Ying-Chou Cheng , Tsong-Hua Ou , Wen-Hao Liu , Ru-Gun Liu , Wen-Chun Huang
- Applicant: Ying-Chou Cheng , Tsong-Hua Ou , Wen-Hao Liu , Ru-Gun Liu , Wen-Chun Huang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
The present disclosure relates to parameterized dummy cell insertion for process enhancement and methods for fabricating the same. In accordance with one or more embodiments, methods include providing an integrated circuit (IC) design layout with defined pixel-units, simulating thermal effect to the IC design layout including each pixel-unit, generating a thermal effect map of the IC design layout including each pixel-unit, determining a target absorption value for the IC design layout, and performing thermal dummy cell insertion to each pixel-unit of the IC design layout based on the determined target absorption value.
Public/Granted literature
- US20120144361A1 PARAMETERIZED DUMMY CELL INSERTION FOR PROCESS ENHANCEMENT Public/Granted day:2012-06-07
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