Invention Grant
US08334027B2 Method for DC plasma assisted chemical vapor deposition in the absence of a positive column
有权
在没有正性柱的情况下进行直流等离子体辅助化学气相沉积的方法
- Patent Title: Method for DC plasma assisted chemical vapor deposition in the absence of a positive column
- Patent Title (中): 在没有正性柱的情况下进行直流等离子体辅助化学气相沉积的方法
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Application No.: US11833679Application Date: 2007-08-03
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Publication No.: US08334027B2Publication Date: 2012-12-18
- Inventor: Wook-Seong Lee , Young-Joon Baik , Jeung-Hyun Jeong , Ki-Woong Chae
- Applicant: Wook-Seong Lee , Young-Joon Baik , Jeung-Hyun Jeong , Ki-Woong Chae
- Applicant Address: KR
- Assignee: Korea Institute of Science and Technology
- Current Assignee: Korea Institute of Science and Technology
- Current Assignee Address: KR
- Agency: Ostrolenk Faber LLP
- Priority: KR10-2007-0045695 20070510
- Main IPC: H05H1/24
- IPC: H05H1/24

Abstract:
In the method for depositing a material in the absence of a positive column, a discharge is generated between a cathode and an anode disposed to face each other in a reaction chamber by applying a DC voltage therebetween, and introducing reaction gas into the reaction chamber, thereby depositing a material on a substrate mounted on the anode and serving as a part of the anode, wherein the deposition of the material on the substrate is performed under a state that a cathode glow and an anode glow exist in a form of thin layers coating respectively the surfaces of the cathode and the substrate, while a positive column does not exist or is so small as to be negligible.
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