Invention Grant
- Patent Title: Semiconductor photovoltaic devices and methods of manufacturing the same
- Patent Title (中): 半导体光伏器件及其制造方法
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Application No.: US11865600Application Date: 2007-10-01
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Publication No.: US08334160B2Publication Date: 2012-12-18
- Inventor: Brite Jui-Hsien Wang , Naejye Hwang , Zingway Pei
- Applicant: Brite Jui-Hsien Wang , Naejye Hwang , Zingway Pei
- Applicant Address: TW Hsinchu
- Assignee: Lof Solar Corporation
- Current Assignee: Lof Solar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A semiconductor photovoltaic device comprises a semiconductor substrate having a first surface and a second surface, the first surface and the second surface being opposed to each other, a plurality of trenches extending into the semiconductor substrate from the first surface, the first surface being a substantially planar surface, a dopant region in the semiconductor substrate near the first surface and the plurality of trenches, a first conductive layer over the semiconductor substrate, and a second conductive layer on the second surface of the semiconductor substrate.
Public/Granted literature
- US20090084440A1 SEMICONDUCTOR PHOTOVOLTAIC DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2009-04-02
Information query
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