Invention Grant
US08334186B2 Method of forming a memory device incorporating a resistance variable chalcogenide element
有权
形成包含电阻变化硫属元素元素的存储器件的方法
- Patent Title: Method of forming a memory device incorporating a resistance variable chalcogenide element
- Patent Title (中): 形成包含电阻变化硫属元素元素的存储器件的方法
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Application No.: US12819876Application Date: 2010-06-21
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Publication No.: US08334186B2Publication Date: 2012-12-18
- Inventor: Kristy A. Campbell
- Applicant: Kristy A. Campbell
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A method of forming a memory device, such as a PCRAM, including selecting a chalcogenide glass backbone material for a resistance variable memory function and devices formed using such a method.
Public/Granted literature
- US20100317149A1 Method of forming a memory device incorporating a resistance variable chalcogenide element Public/Granted day:2010-12-16
Information query
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