Invention Grant
- Patent Title: Method for producing silicon nanostructures
- Patent Title (中): 生产硅纳米结构的方法
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Application No.: US12790331Application Date: 2010-05-28
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Publication No.: US08334216B2Publication Date: 2012-12-18
- Inventor: Ching-Fuh Lin , Shu-Jia Syu
- Applicant: Ching-Fuh Lin , Shu-Jia Syu
- Applicant Address: TW Taipei
- Assignee: National Taiwan University
- Current Assignee: National Taiwan University
- Current Assignee Address: TW Taipei
- Agency: Stout, Uxa, Buyan & Mullins, LLP
- Priority: TW99105914A 20100302
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
The present invention provides silicon nanostructures and their producing method. By employing a metal-assisted chemical etching method, the bottom of the produced silicon nanostructures, connected to the silicon substrate, is porous and side etched, such that the silicon nanostructures can be easily transferred to a hetero-substrate by a physical manner.
Public/Granted literature
- US20110215441A1 SILICON NANOSTRUCTURES AND METHOD FOR PRODUCING THE SAME AND APPLICATION THEREOF Public/Granted day:2011-09-08
Information query
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