Invention Grant
- Patent Title: Method of forming non-conformal layers
- Patent Title (中): 形成非保形层的方法
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Application No.: US12573008Application Date: 2009-10-02
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Publication No.: US08334218B2Publication Date: 2012-12-18
- Inventor: Sebastian E. Van Nooten , Jan Willem Maes , Steven Marcus , Glen Wilk , Petri Räisänen , Kai-Erik Elers
- Applicant: Sebastian E. Van Nooten , Jan Willem Maes , Steven Marcus , Glen Wilk , Petri Räisänen , Kai-Erik Elers
- Applicant Address: US AZ Phoenix
- Assignee: ASM America, Inc.
- Current Assignee: ASM America, Inc.
- Current Assignee Address: US AZ Phoenix
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469

Abstract:
In one aspect, non-conformal layers are formed by variations of plasma enhanced atomic layer deposition, where one or more of pulse duration, separation, RF power on-time, reactant concentration, pressure and electrode spacing are varied from true self-saturating reactions to operate in a depletion-effect mode. Deposition thus takes place close to the substrate surface but is controlled to terminate after reaching a specified distance into openings (e.g., deep DRAM trenches, pores, etc.). Reactor configurations that are suited to such modulation include showerhead, in situ plasma reactors, particularly with adjustable electrode spacing. In another aspect, alternately and sequentially contacting a substrate, the substrate including openings, with at least two different reactants, wherein an under-saturated dose of at least one of the reactants has been predetermined and the under-saturated dose is provided uniformly across the substrate surface, deposits a film that less than fully covers surfaces of the openings, leading to depletion effects in less accessible regions on the substrate surface.
Public/Granted literature
- US20100022099A1 METHOD OF FORMING NON-CONFORMAL LAYERS Public/Granted day:2010-01-28
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