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US08334549B2 Light emitting diode with current blocking region 有权
具有电流阻挡区域的发光二极管

Light emitting diode with current blocking region
Abstract:
A light emitting diode and a fabricating method thereof are provided. A first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer with a first surface are sequentially formed a substrate. Next, the first surface is treated during a surface treatment process to form a current-blocking region which extends from the first surface to the light emitting layer to a depth of 1000 angstroms. Afterward, a first electrode is formed above the current-blocking region of the second-type semiconductor layer, and a second electrode is formed to electrically contact to the first-type semiconductor layer. Since the current-blocking region is formed with a determined depth within the second-type semiconductor layer, the light extraction efficiency of the light emitting diode may be increased.
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