Invention Grant
- Patent Title: Light emitting diode with current blocking region
- Patent Title (中): 具有电流阻挡区域的发光二极管
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Application No.: US13029677Application Date: 2011-02-17
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Publication No.: US08334549B2Publication Date: 2012-12-18
- Inventor: Mong-Ea Lin , Yao-Hui Lin , Chao-Ming Chiu , Chang-Ming Lu
- Applicant: Mong-Ea Lin , Yao-Hui Lin , Chao-Ming Chiu , Chang-Ming Lu
- Applicant Address: TW Hsinchu
- Assignee: Lextar Electronics Corporation
- Current Assignee: Lextar Electronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C.
- Agent Anthony King
- Priority: TW99127201A 20100813
- Main IPC: H01L33/30
- IPC: H01L33/30

Abstract:
A light emitting diode and a fabricating method thereof are provided. A first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer with a first surface are sequentially formed a substrate. Next, the first surface is treated during a surface treatment process to form a current-blocking region which extends from the first surface to the light emitting layer to a depth of 1000 angstroms. Afterward, a first electrode is formed above the current-blocking region of the second-type semiconductor layer, and a second electrode is formed to electrically contact to the first-type semiconductor layer. Since the current-blocking region is formed with a determined depth within the second-type semiconductor layer, the light extraction efficiency of the light emitting diode may be increased.
Public/Granted literature
- US20120037952A1 LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF Public/Granted day:2012-02-16
Information query
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