Invention Grant
- Patent Title: Semiconductor device having image sensor
- Patent Title (中): 具有图像传感器的半导体器件
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Application No.: US13308621Application Date: 2011-12-01
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Publication No.: US08334555B2Publication Date: 2012-12-18
- Inventor: Hidetoshi Koike
- Applicant: Hidetoshi Koike
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-129577 20070515
- Main IPC: H01L31/12
- IPC: H01L31/12
Abstract:
A pixel area for generating an image signal corresponding to incident light is formed on a semiconductor substrate. A light-shielding layer is formed on the semiconductor substrate around the pixel area. The light-shielding layer has a slit near the pixel area and shields the incident light. A passivation film is formed in the pixel area, on the light-shielding layer, and in the slit. A coating layer is formed in the slit of the light-shielding layer and on the passivation film in the pixel area. Microlenses are formed on the coating layer in the pixel area.
Public/Granted literature
- US20120068293A1 SEMICONDUCTOR DEVICE HAVING IMAGE SENSOR Public/Granted day:2012-03-22
Information query
IPC分类:
