Invention Grant
- Patent Title: Semiconductor device and electronic device
- Patent Title (中): 半导体器件和电子器件
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Application No.: US13122035Application Date: 2008-10-03
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Publication No.: US08334575B2Publication Date: 2012-12-18
- Inventor: Jean Philippe Laine , Patrice Besse , Alexis Huot-Marchand
- Applicant: Jean Philippe Laine , Patrice Besse , Alexis Huot-Marchand
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- International Application: PCT/IB2008/055323 WO 20081003
- International Announcement: WO2010/038101 WO 20100408
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L21/8238 ; H03K17/0812 ; H03K17/16

Abstract:
A semiconductor device comprises a switching element. The switching element comprises a first channel terminal, a second channel terminal and a switching terminal. One of the first and second channel terminals provides a reference terminal and the switching element is arranged such that an impedance of the switching element between the first channel terminal and second channel terminal is dependant upon a voltage across the switching terminal and the reference terminal. The semiconductor device further comprises a first resistance element operably coupled between the first channel terminal and the switching terminal and a second resistance element operably coupled between the switching terminal and the second channel terminal of the semiconductor device. When a negative current is encountered at the first channel terminal, the negative current causes both a voltage drop across the switching terminal and the first channel terminal and a voltage drop across the second channel terminal and the switching terminal.
Public/Granted literature
- US20110180876A1 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE Public/Granted day:2011-07-28
Information query
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