Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12588524Application Date: 2009-10-19
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Publication No.: US08334591B2Publication Date: 2012-12-18
- Inventor: Hidetoshi Kusano
- Applicant: Hidetoshi Kusano
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader Fishman & Grauer, PLLC
- Priority: JP2008-272247 20081022
- Main IPC: H01L23/10
- IPC: H01L23/10 ; H01L23/34

Abstract:
A semiconductor device includes: a substrate; a semiconductor chip with a surface facing down mounted on the substrate; a reinforcement material provided on the substrate in a peripheral region of a region on which the semiconductor chip is mounted; and a heat sink coupled to the semiconductor chip via a highly thermally conductive material. The heat sink is disposed on the semiconductor chip and the reinforcement material by being coupled to the reinforcement material via an adhesive material, and is provided with an uneven area on a side coupled to the reinforcement material.
Public/Granted literature
- US20100096747A1 Semiconductor device and method of manufacturing the same Public/Granted day:2010-04-22
Information query
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