Invention Grant
US08335106B2 Superlattice device, manufacturing method thereof, solid-state memory including superlattice device, data processing system, and data processing device
失效
超晶格器件及其制造方法，包括超晶格器件，数据处理系统和数据处理器件的固态存储器
- Patent Title: Superlattice device, manufacturing method thereof, solid-state memory including superlattice device, data processing system, and data processing device
- Patent Title (中): 超晶格器件及其制造方法，包括超晶格器件，数据处理系统和数据处理器件的固态存储器
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Application No.: US12772340Application Date: 2010-05-03
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Publication No.: US08335106B2Publication Date: 2012-12-18
- Inventor: Kazuo Aizawa , Isamu Asano , Junji Tominaga , Alexander Kolobov , Paul Fons , Robert Simpson
- Applicant: Kazuo Aizawa , Isamu Asano , Junji Tominaga , Alexander Kolobov , Paul Fons , Robert Simpson
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-113994 20090508
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
To include a superlattice laminate having laminated thereon a first crystal layer of which crystal lattice is a cubic crystal and in which positions of constituent atoms are reversibly replaced by application of energy, and a second crystal layer having a composition different from that of the first crystal layer, and an orientation layer that is an underlaying layer of the superlattice laminate and causes a laminated surface of the first crystal layer to be (111)-orientated. According to the present invention, the laminated surface of the first crystal layer can be (111)-orientated by using the orientation layer as an underlaying layer. In the first crystal layer of which laminated surface is (111)-orientated, a crystal structure reversibly changes when a relatively low energy is applied. Therefore, characteristics of a superlattice device having this crystal layer can be enhanced.
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