Invention Grant
US08335124B2 External signal input circuit of semiconductor memory 有权
半导体存储器的外部信号输入电路

  • Patent Title: External signal input circuit of semiconductor memory
  • Patent Title (中): 半导体存储器的外部信号输入电路
  • Application No.: US12839341
    Application Date: 2010-07-19
  • Publication No.: US08335124B2
    Publication Date: 2012-12-18
  • Inventor: Jae Bum Ko
  • Applicant: Jae Bum Ko
  • Applicant Address: KR Gyeonggi-do
  • Assignee: SK Hynix Inc.
  • Current Assignee: SK Hynix Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: William Park & Associates Ltd.
  • Priority: KR10-2010-0017744 20100226
  • Main IPC: G11C8/00
  • IPC: G11C8/00
External signal input circuit of semiconductor memory
Abstract:
In one embodiment, an external signal input circuit of a semiconductor memory may include: an input block configured to receive a plurality of external signals and to generate a plurality of internal signals; and a control block configured to output one or more internal signals of the plurality of internal signals that correspond to a rank configuration of the semiconductor memory and to block output of one or more internal signals of the plurality of internal signals that do not correspond to the rank configuration.
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