Invention Grant
- Patent Title: External signal input circuit of semiconductor memory
- Patent Title (中): 半导体存储器的外部信号输入电路
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Application No.: US12839341Application Date: 2010-07-19
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Publication No.: US08335124B2Publication Date: 2012-12-18
- Inventor: Jae Bum Ko
- Applicant: Jae Bum Ko
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2010-0017744 20100226
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
In one embodiment, an external signal input circuit of a semiconductor memory may include: an input block configured to receive a plurality of external signals and to generate a plurality of internal signals; and a control block configured to output one or more internal signals of the plurality of internal signals that correspond to a rank configuration of the semiconductor memory and to block output of one or more internal signals of the plurality of internal signals that do not correspond to the rank configuration.
Public/Granted literature
- US20110211405A1 EXTERNAL SIGNAL INPUT CIRCUIT OF SEMICONDUCTOR MEMORY Public/Granted day:2011-09-01
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