Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13030356Application Date: 2011-02-18
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Publication No.: US08338287B2Publication Date: 2012-12-25
- Inventor: Masayuki Miura , Katsuhiko Oyama
- Applicant: Masayuki Miura , Katsuhiko Oyama
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JPP2010-068408 20100324
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
In one embodiment, a preliminary solder layer made of a Sn alloy is formed on a connecting pad of a wiring substrate. A solder bump made of a Sn alloy is formed on an electrode pad of a semiconductor chip. After contacting the preliminary solder layer and the solder bump, the preliminary solder layer and the solder bump are melted by heating to a temperature of their melting points or higher to form a solder connecting part made of a Sn alloy containing Ag and Cu. Only the preliminary solder layer of the preliminary solder layer and the solder bump is composed of a Sn alloy containing Ag.
Public/Granted literature
- US20110233793A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-09-29
Information query
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