Invention Grant
- Patent Title: Information storage devices using movement of magnetic domain walls and methods of manufacturing the same
- Patent Title (中): 使用磁畴壁运动的信息存储装置及其制造方法
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Application No.: US13064894Application Date: 2011-04-25
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Publication No.: US08339829B2Publication Date: 2012-12-25
- Inventor: Chee-kheng Lim , Eun-hyoung Cho , Sung-hoon Choa
- Applicant: Chee-kheng Lim , Eun-hyoung Cho , Sung-hoon Choa
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0133095 20061222; KR10-2006-0138862 20061229; KR10-2006-0138866 20061229
- Main IPC: G11C19/00
- IPC: G11C19/00
Abstract:
An information storage device using movement of magnetic domain walls includes a writing magnetic layer having a magnetic domain wall. A stack structure is formed on the writing magnetic layer. The stack structure includes a connecting magnetic layer and an information storing magnetic layer stacked sequentially. The information storage device also includes a reader for reading information stored in the information storing magnetic layer.
Public/Granted literature
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