Invention Grant
US08339834B2 Non-volatile semiconductor memory device including a variable resistance element
有权
包括可变电阻元件的非易失性半导体存储器件
- Patent Title: Non-volatile semiconductor memory device including a variable resistance element
- Patent Title (中): 包括可变电阻元件的非易失性半导体存储器件
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Application No.: US12882822Application Date: 2010-09-15
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Publication No.: US08339834B2Publication Date: 2012-12-25
- Inventor: Tsukasa Nakai , Yasuhiro Nojiri , Shuichi Kuboi , Motoya Kishida , Akiko Nomachi , Masanobu Baba , Hiroyuki Fukumizu
- Applicant: Tsukasa Nakai , Yasuhiro Nojiri , Shuichi Kuboi , Motoya Kishida , Akiko Nomachi , Masanobu Baba , Hiroyuki Fukumizu
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-036652 20100222
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L45/00
Abstract:
According to one embodiment, a non-volatile semiconductor memory device includes: a first line; a second line intersecting with the first line; and a memory cell arranged at a position where the second line intersects with the first line, wherein, the memory cell includes: a variable resistance element; and a negative resistance element connected in series to the variable resistance element.
Public/Granted literature
- US20110205781A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2011-08-25
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