Invention Grant
- Patent Title: Flash memory device, programming method and memory system
- Patent Title (中): 闪存设备，编程方法和存储系统
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Application No.: US12719189Application Date: 2010-03-08
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Publication No.: US08339845B2Publication Date: 2012-12-25
- Inventor: Oh Suk Kwon
- Applicant: Oh Suk Kwon
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2009-0025332 20090325
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
Provided is a programming method in a flash memory device. The programming method applies a first pass voltage to a selection word line and a non-selection word line, applies a local voltage to the non-selection word line, applies a second pass voltage to the selection word line, and applies a programming voltage to the selection word line.
Public/Granted literature
- US20100246259A1 FLASH MEMORY DEVICE, PROGRAMMING METHOD AND MEMORY SYSTEM Public/Granted day:2010-09-30
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