Invention Grant
- Patent Title: Capacitive strain sensor
- Patent Title (中): 电容应变传感器
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Application No.: US12606022Application Date: 2009-10-26
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Publication No.: US08342031B2Publication Date: 2013-01-01
- Inventor: Babak Jamshidi , Albert P. Pisano
- Applicant: Babak Jamshidi , Albert P. Pisano
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Bozicevic, Field & Francis LLP
- Agent Bret E. Field; Rudy J. Ng
- Main IPC: G01L1/00
- IPC: G01L1/00

Abstract:
Provided are capacitive strain sensors. In certain embodiments, the capacitive strain sensor can continuously and accurately measure strain in corrosive ambient conditions and may operate up to 370° C. or more in air. The sensor includes a differential capacitor that includes a bending beam structure. In some instances, the sensor is configured to increase the effect of strain in a substrate along a sensing axis while attenuating the effect of cross-axis strain. Also provided are methods of making the capacitive strain sensors, e.g., using Micro-Electro-Mechanical System (MEMS) fabrication techniques, and methods of using the capacitive strain sensors.
Public/Granted literature
- US20100162824A1 CAPACITIVE STRAIN SENSOR Public/Granted day:2010-07-01
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