Invention Grant
- Patent Title: Substrate processing apparatus
- Patent Title (中): 基板加工装置
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Application No.: US12710549Application Date: 2010-02-23
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Publication No.: US08343277B2Publication Date: 2013-01-01
- Inventor: Yuji Takebayashi , Satoshi Okada , Takashi Nakagawa
- Applicant: Yuji Takebayashi , Satoshi Okada , Takashi Nakagawa
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2009-039906 20090223
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/46 ; C23F1/00 ; H01L21/306 ; C23C16/06 ; C23C16/22

Abstract:
To inhibit a diffusion of particles into a processing chamber and reduce a cost required for exchanging a gas filter. A substrate processing apparatus comprises: a processing chamber processing substrates; a gas supply part supplying processing gas into the processing chamber; wherein the gas supply part has a gas supply nozzle disposed in the processing chamber; a filter removing impurities contained in the processing gas; and a gas supply port opened in the gas supply nozzle, for supplying into the processing chamber the processing gas from which impurities are removed by the filter.
Public/Granted literature
- US20100212593A1 SUBSTRATE PROCESSING APPARATUS Public/Granted day:2010-08-26
Information query
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