Invention Grant
- Patent Title: Ceiling plate and plasma process apparatus
- Patent Title (中): 天花板和等离子体处理装置
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Application No.: US12441429Application Date: 2008-08-20
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Publication No.: US08343308B2Publication Date: 2013-01-01
- Inventor: Caizhong Tian , Tetsuya Nishizuka , Kiyotaka Ishibashi , Toshihisa Nozawa
- Applicant: Caizhong Tian , Tetsuya Nishizuka , Kiyotaka Ishibashi , Toshihisa Nozawa
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2007-221524 20070828
- International Application: PCT/JP2008/064854 WO 20080820
- International Announcement: WO2009/028376 WO 20090305
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306
Abstract:
A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural concave portions provided along a circle on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.
Public/Granted literature
- US20100032094A1 CEILING PLATE AND PLASMA PROCESS APPARATUS Public/Granted day:2010-02-11
Information query
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