Invention Grant
- Patent Title: Method of stressing a thin pattern
- Patent Title (中): 强调薄图案的方法
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Application No.: US11172945Application Date: 2005-07-05
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Publication No.: US08343780B2Publication Date: 2013-01-01
- Inventor: Jean-Charles Barbe , Thomas Ernst
- Applicant: Jean-Charles Barbe , Thomas Ernst
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0451440 20040705
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
The invention relates to a method for straining or deforming a pattern or a thin layer (24), starting from an initial component comprising the said thin layer and a prestressed layer (20), this method comprising: an etching step of the prestressed layer, perpendicular to its surface.
Public/Granted literature
- US20060091105A1 Method for constraining a thin pattern Public/Granted day:2006-05-04
Information query
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