Invention Grant
US08343784B2 Light emitting diode device, manufacturing method of the light emitting diode device and mounting structure of the light emitting diode device 有权
发光二极管器件,发光二极管器件的制造方法和发光二极管器件的安装结构

  • Patent Title: Light emitting diode device, manufacturing method of the light emitting diode device and mounting structure of the light emitting diode device
  • Patent Title (中): 发光二极管器件,发光二极管器件的制造方法和发光二极管器件的安装结构
  • Application No.: US11586648
    Application Date: 2006-10-26
  • Publication No.: US08343784B2
    Publication Date: 2013-01-01
  • Inventor: Dong Wook Park
  • Applicant: Dong Wook Park
  • Applicant Address: KR Seoul
  • Assignee: LG Innotek Co., Ltd.
  • Current Assignee: LG Innotek Co., Ltd.
  • Current Assignee Address: KR Seoul
  • Agency: Birch, Stewart, Kolasch & Birch, LLP
  • Priority: KR10-2005-0101771 20051027
  • Main IPC: H01L21/00
  • IPC: H01L21/00
Light emitting diode device, manufacturing method of the light emitting diode device and mounting structure of the light emitting diode device
Abstract:
The embodiment of the present invention provides an LED device, a manufacturing method of the LED device and a mounting structure of the LED device. In order to manufacture the LED device with low manufacturing cost through simple process capable of overcoming thermal fatigue due to heat generation, breaking of wire due to mechanical stress, the method comprises etching a wafer; forming a conductive metal layer from an upper surface to a lower surface of the wafer; bonding a light emitting diode chip to the metal layer which is disposed on the upper surface of the wafer; filling a resin into a space over the light emitting diode chip; and forming an electrode pad on the metal layer which is disposed on the lower surface of the wafer.
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