Invention Grant
- Patent Title: Microstructure device with an improved anchor
- Patent Title (中): 具有改进锚的微结构装置
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Application No.: US12858202Application Date: 2010-08-17
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Publication No.: US08343789B2Publication Date: 2013-01-01
- Inventor: Chung-Hsien Lin , Chun-Wen Cheng , Chia-Hua Chu , Yi Heng Tsai
- Applicant: Chung-Hsien Lin , Chun-Wen Cheng , Chia-Hua Chu , Yi Heng Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02

Abstract:
The present disclosure provides a system of fabricating a microstructure device with an improved anchor. A method of fabricating a microstructure device with an improved anchor includes providing a substrate and forming an oxide layer on the substrate. Then, a cavity is etched in the oxide layer, such that the cavity includes a sidewall in the oxide layer. A microstructure device layer is then bonded to the oxide layer over the cavity. Forming a microstructure device, a trench is etched in the device layer to define an outer boundary of the microstructure device. In an embodiment, the outer boundary is substantially outside of the sidewall of the cavity. Then, the sidewall of the cavity is etched away through the trench in the device layer, to thereby suspend the microstructure device over the cavity.
Public/Granted literature
- US20120043626A1 MICROSTRUCTURE DEVICE WITH AN IMPROVED ANCHOR Public/Granted day:2012-02-23
Information query
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