Invention Grant
- Patent Title: Thin film transistor and method of producing thin film transistor
- Patent Title (中): 薄膜晶体管及薄膜晶体管的制造方法
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Application No.: US12815430Application Date: 2010-06-15
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Publication No.: US08343800B2Publication Date: 2013-01-01
- Inventor: Kenichi Umeda , Masayuki Suzuki , Atsushi Tanaka , Yuki Nara
- Applicant: Kenichi Umeda , Masayuki Suzuki , Atsushi Tanaka , Yuki Nara
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: SOLARIS Intellectual Property Group, PLLC
- Priority: JP2009-147932 20090622
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/16 ; H01L29/12
Abstract:
The invention provides a thin film transistor comprising an active layer, the active layer comprising an IGZO-based oxide material, the IGZO-based oxide material being represented by a composition formula of In2-xGaxZnO4-δ, where 0.75
Public/Granted literature
- US20100320459A1 THIN FILM TRANSISTOR AND METHOD OF PRODUCING THIN FILM TRANSISTOR Public/Granted day:2010-12-23
Information query
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