Invention Grant
- Patent Title: Method of forming a programmable metallization memory cell
- Patent Title (中): 形成可编程金属化存储单元的方法
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Application No.: US13278240Application Date: 2011-10-21
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Publication No.: US08343801B2Publication Date: 2013-01-01
- Inventor: Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
- Applicant: Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Mueting Raasch & Gebhardt PA
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/16
Abstract:
Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
Public/Granted literature
- US20120040496A1 PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER Public/Granted day:2012-02-16
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